2023年6月9日 · With superior peak electron velocity compared to Si and GaAs and a higher breakdown voltage than SiGe, InP has the potential to benefit many microwave, mmWave and …

2017年5月2日 · InP HBTs offer high radio-frequency (RF) output power density, millivolt (mV) threshold uniformity, and high levels of integration. Integration with multilevel thin-film wiring …

In this work we of a 130 described the development and performance nm InP HBT integrated circuit technology targeting THz monolithic circuit demonstrations. Details of the transistor …

Abstract: High-efficiency power amplifiers (PAs) will be critical building-blocks for future sub-THz communications systems. InP heterojunction bipolar transistors (HBTs) with THz-class …

We achieved Ft of 175GHz with BVceo of 6.6V and Ft of 100GHz with BVceo of 16V to fulfill the requirements in optical communication and RF power amplifier applications. An advanced sub …

InP HBTs offer high radio frequency (RF) output power density, millivolt (mV) threshold uniformity, and high levels of integration. Integration with multilevel thin film wiring permits the realization …

InP HBT Technologies For very high speed mixed-signal ICs for test instruments and and 40-100G Transimpedance Amplifier (TIA) for optical fiber communication applications, two …

FBH develops electronic components for terahertz (THz) applications such as high-resolution radar, wideband wireless communications, and analytical sensing. These devices are based …

Through aggressive lithographical and epitaxial scaling, the bandwidths of InP-based heterojunction bipolar transistors have been extended to THz frequencies.

Indium phosphide (InP)-based heterojunction bipolar transistors (HBTs) have excellent high-frequency performance suitable for large-bandwidth integrated circuits (ICs). Increasing the …