
IRFZ48N - Infineon Technologies
55V Single N-Channel Power MOSFET in a TO-220 package.
IRFZ48N Datasheet (PDF) - NXP Semiconductors
IRFZ48N Product details N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRFZ48N Datasheet (PDF) - International Rectifier
IRFZ48N Product details Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRFZ48 www.vishay.com Vishay Siliconix S21-0340-Rev. C, 12-Apr-2021 5 Document Number: 91294 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
IRFZ48N 恩智浦-NXP_PDF_数据手册_Datasheet_规格书_恩智浦 …
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching applications.
Maximum Effective Transient Thermal Impedance, Junction-to-Case. Ground Plane. Low Leakage Inductance Current Transformer. dv/dt controlled by RG. ISD controlled by Duty Factor "D"
IRFZ48N Transistor Pinout, Uses, Equivalent, Features and More
2021年4月30日 · IRFZ48N is a power MOSFET manufactured in TO-220 transistor package. It is a ruggedized transistor and can be used for general uses in variety of applications.
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PD ------ IRFZ48N
IRFZ48N PRELIMINARY HEXFET® Power MOSFET PD -----Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer
IRFZ48N Datasheet and Replacement. Cross Reference Search
IRFZ48N Transistor Datasheet, IRFZ48N Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
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