Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

55V Single N-Channel Power MOSFET in a TO-220 package.

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

部件名: IRFZ46N. 下载. 文件大小: 85Kbytes. 页: 8 Pages. 功能描述: Power MOSFET(Vdss=55V, Rds(on)=16.5mohm, Id=53A). 制造商: International Rectifier.

Part #: IRFZ46N. Description: Power MOSFET (Vdss=55V, Rds (on)=16.5mohm, Id=53A). File Size: 85.31 Kbytes. Manufacturer: International Rectifier.

2021年4月18日 · IRFZ46N is an N Channel MOSFET available in TO-220 package. This transistor can be used in wide variety of applications. The transistor can drive max load of 53A and 180A in pulse mode. The maximum load voltage is 55V and power dissipation of the transistor is 107 Watt.

Uses IRFZ46N data and test conditions. This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175°C. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 39A.

IRFZ46N由OSEN(欧芯)设计生产，立创商城现货销售，正品保证，参考价格￥0.967，封装为TO-220。商城还提供IRFZ46N专业中文资料、详细参数、引脚图、PCB焊盘图，典型应用图，Datasheet数据手册等资料查询和免费下载。

IRFZ46NPBF由Infineon (英飞凌)设计生产，立创商城现货销售，正品保证，参考价格￥2.54，封装为TO-220AB。 商城还提供IRFZ46NPBF专业中文资料、详细参数、引脚图、PCB焊盘图，典型应用图，Datasheet数据手册等资料查询和免费下载。 参数：类型：1个N沟道；漏源电压 (Vdss)：55V；连续漏极电流 (Id)：53A；导通电阻 (RDS (on))：16.5mΩ@10V,28A；耗散功率 (Pd)：107W；阈值电压 (Vgs (th))：4V；栅极电荷量 (Qg)：72nC@10V；输入电容 …