IRF630_ST(意法半导体)_IRF630中文资料_PDF手册_价格-立创商城
IRF630由ST(意法半导体)设计生产，立创商城现货销售，正品保证，参考价格￥3.56，封装为TO-220。商城还提供IRF630专业中文资料、详细参数、引脚图、PCB焊盘图，典型应用 …
IRF630 www.vishay.com Vishay Siliconix S21-0819-Rev. C, 02-Aug-2021 2 Document Number: 91031 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT …
This Power MOSFET series realized with STMicroelectronics unique STripFETTM process has specifically been designed to minimize input capacitance and gate charge. It is therefore …
IRF630 Datasheet(PDF) - STMicroelectronics
This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared …
IRF630 MOSFETs | Vishay
IRF630. Power MOSFET. General Information: General Information. Useful Web Links. Markings: Part Marking Information. TO-220, I2PAK (TO-262), D2PAK (TO-263) (High Voltage) …
IRF630中文资料_PDF数据手册_参数_引脚图_图片-立创商城
STMicroelectronics公司的IRF630是一款通孔200V N通道网格覆盖II功率MOSFET，TO-220封装.该功率MOSFET采用该公司MESH OVERLAY工艺设计，基于统一带状布局，该工艺匹配并 …
IRF630 STMicroelectronics | Discrete Semiconductor Products
IRF630 – N-Channel 200 V 9A (Tc) 75W (Tc) Through Hole TO-220 from STMicroelectronics. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
IRF630 - 意法半导体STMicroelectronics
Discover our medium-voltage N-channel power MOSFET portfolio, ranging from > 30 V to 350 V, for a broad range of industrial and automotive applications. Speed up your design by …
IRF630 - N-channel 200 V, 0.35 Ohm typ., 9 A Power MOSFET in …
Discover our medium-voltage N-channel power MOSFET portfolio, ranging from > 30 V to 350 V, for a broad range of industrial and automotive applications. Speed up your design by …
IRF630 - 百度百科
IRF630的晶体管极性是N，功耗是100W，封装类型是TO-220，针脚数是3。