2023年3月30日 · Notably, we find that the XRD peak of ferroelectric o -phase HZO in the A-type heterostructure is stronger than that in the B-type heterostructure, while the peak of non-ferroelectric m -phase...

2021年4月22日 · In this regard, the present work demonstrates the possibility of direct growth of o-phase in Zr doped HfO 2 (Hf 0.5 Zr 0.5 O 2: HZO) on Si substrate, with finer crystallites using PLD technique.

2023年3月1日 · In this study, the HZO thin films with and without the need for the wake-up process to enhance the ferroelectricity were prepared, and the precession electron diffraction (PED) phase mapping technique was utilized to identify the crystalline phases in the HZO layers.

A comparison of XRD of nanolaminate, HZO(0.5), and pure ZrO2 film identified the coexistence of o-and t-structures in the nanolaminate. The monoclinic m-phase was not detected in any of these...

The texture and orientation of HZO films were analyzed through the state-of-the-art spherical aberration corrected transmission electron microscope (Cs-TEM) technique.

2023年12月1日 · Hafnium zirconium oxide (HZO)-based ferroelectric field-effect transistors (FeFETs) are three-terminal devices with attractive properties for embedded memory and in-memory computing architectures. We probe the HZO ferroelectric landscape dynamics with materials characterization, device modeling, and electrical measurements.

2022年12月7日 · Although ferroelectricity can be achieved in HfO 2 by the incorporation of various dopants, including Si, Al 5, La, Y, and so forth, the Hf 0.5 Zr 0.5 O 2 (HZO) mixed oxide drew the highest attention due to the relatively low crystallization temperature (400–600 °C) and, therefore, back-end-of-line (BEOL) compatibility.

2025年3月28日 · The annealing temperature of the TiN/HZO/TiN stacks was set to 700 °C to ensure complete crystallization of the HZO films. The GIXRD and XRD patterns obtained using θ–2θ coupled geometry with lab-scale XRD are presented in Figures S2 and S3 in the Supporting Information. After annealing, the TiN capping layer was removed using an SC-1 ...

The ferroelectricity of Zr-doped HfO₂ (HZO) thin films induced by low thermal budget annealing provides great potential to implement the ferroelectric functionalities into the back end of line ...

2023年8月9日 · Hafnium zirconium oxide (HZO) is an ideal candidate for the implementation of ferroelectric memristive devices, due to its compatibility with the complementary metal-oxide-semiconductor technology. Ferroelectricity in HZO films is significantly influenced by the properties of electrode/HZO interfaces.