2021年12月1日 · Valence band XPS of the HZO (a) and HZLO (b) samples before and after ion bombardment (symbols), as well as the calculated ones for the perfect crystals and for crystal with differently coordinated O vacancies (lines).

2023年9月1日 · X-ray photoelectron spectroscopy (XPS) analysis was performed, using an AXIS Supra, Kratos ANALYTICAL equipped with a Mg Kα X-ray source (power: 225 W). XPS measurements were done on the bare W electrode, as-deposited 2-nm-thick HZO thin film on the W electrode, and 2-nm-thick HZO thin film on the W electrode after RTP.

2021年4月22日 · The surface chemical compositions of the PLD -HZO grown with three distinct working \ (P_ {O_2}\) = 0.1, 1, and 100 mTorr are analyzed using XPS, and the spectra are calibrated using carbon 1 s...

2022年10月6日 · In this work, the effects of CF 4 and O 2 plasma passivation on the remnant polarization and endurance characteristics of ferroelectric-based MFIS capacitor are investigated. The quantitative...

The power performance at 30 GHz exhibits a maximum output power of 1.36 W/mm, a maximum power gain of 12.3 dB, and a peak power-added efficiency of 21%, demonstrating the great potential of HZO...

The hafnium-zirconium oxide (HZO) has been reported to be a promising candidate for low-power VLSI logic and memory applications.

2021年8月2日 · XPS was used to determine the stoichiometry and chemical state of the elements in the HZO films. XRR measurements were collected to determine the thickness, roughness, and density of HZO films, while GIXRD and conventional XRD measurements were recorded to investigate its crystalline structure and orientation.

2023年12月1日 · We examined the HZO stoichiometry as a function of different peak temperature thermal processing temperatures using x-ray photoemission spectroscopy (XPS) (Fig. 1 a and b). The estimated stoichiometry of all the films approximated Hf 0.45 Zr 0.55 O 2, regardless of annealing conditions, with no detected sub-oxide phases (Hf 0.45 Zr 0.55 O 2-x).

In this work, we study the structural and electrical properties of Hafnium Zirconium Oxide (HZO) thin films deposited by Hf0.5Zr0.5O2 single-target sputtering to fabricate a TiN/ (14-/22 nm-thick...

In this work, we have successfully reduced the coercive field of HZO ferroelectric thin films to 0.8 MV/cm by introducing TiO2 interface layers. When compared to HZO samples, the coercive field demonstrates a 30% reduction under the same electric field.