2021年12月1日 · Ferroelectric Hf0.5 Zr 0.5 O 2 (HZO) and La-doped Hf 0.5 Zr 0.5 O 2 (HZLO) films with a thickness of about 25 nm were synthesized by the ALD on a silicon substrate.

Using HAXPES, we quantified the band alignment for metal nitride and metal oxide electrodes element—specifically in the model systems TiN/HZO/TiN and IrO 2 /HZO/IrO 2. We find that …

2018年9月28日 · Ferroelectricity in HfO2-based materials, especially Hf0.5Zr0.5O2 (HZO), is today one of the most attractive topics because of its wide range of applications in ferroelectric …

The impact of interfacial layer (IL) on the switching characteristics of FTJ is evaluated with various IL thickness, dielectric constant and band offset. The effect of remnant polarization in HZO …

2024年6月15日 · In this work, we comprehensively investigate the polarization fatigue behaviors of Hf0.5 Zr 0.5 O 2 (HZO)/Al 2 O 3/HZO laminated thin films. Several possible mechanisms for …

2021年3月22日 · We report the direct measurement of the energy barriers between various metal electrodes (Pt, Au, Ta, TaN, Ti/Pt, Ni, Al) and hafnium zirconium oxide (Hf 0.58 Zr 0.42 O 2, …

In this letter, a dual Al2O3/Hf0.5Zr0.5O2 (HZO) stack structure ferroelectric (FE) capacitor was designed and fabricated. It is found that the dielectric (DE) A

2023年3月30日 · We built the HZO slab from the orthorhombic ferroelectric bulk phase of HfO 2, where half of the Hf atoms is substituted with Zr, along the nonpolar (100) direction, to …

2023年5月19日 · HZO shows the highest ferroelectricity when the composition ratio of Hf and Zr is 1:1, and since HZO is usually deposited through atomic layer deposition (ALD), the …

2017年6月25日 · Electron transport modulation model for ultrathin hafnium oxide films is proposed. In this work, we report on the electron transport properties of ultrathin (~ 2.5 nm) …