Datasheet3V 2.32019-09-20IHW30N120R5Resonant Switching SeriesMaximum RatingsFor optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet.ParameterSymbol Datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other ...

Infineon Technologies A... Marking: H30MR5. Part #: IHW30N120R5. Download. File Size: 1MbKbytes. Page: 15 Pages. Description: Reverse Conducting IGBT with monolithic body diode. Manufacturer: Infineon Technologies AG.

Manufacturer: Infineon Technologies AG. Description: Reverse Conducting IGBT with monolithic body diode. 1 Results.

Datasheet 6 V 2.3 2019-09-20 IHW30N120R5 Resonant Switching Series Figure 1. Forward bias safe operating area (D=0, TC=25°C, Tvj≤175°C; VGE=15V; tp=1µs) VCE, COLLECTOR-EMITTER VOLTAGE [V] I C, COLLECTOR CURRENT [A] 1 10 100 1000

类型： 绝缘栅双极晶体管(IGBT) 总耗散功率（Ptot）： 【管壳温度（Tc）＝100 ℃】 165 W 集电极电流（I C ）： 【管壳温度（Tc）＝100 ℃】 30 A

Datasheet10V\u00022.32019-09-20IHW30N120R5Resonant\u0002Switching\u0002SeriesFigure 17.Typical\u0002gate\u0002charge(IC=30A)QGE,\u0002GATE\u0002CHARGE\u0002[nC] Datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.

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Description: Reverse conducting IGBT with monolithic body diode. Manufacturer: Infineon Technologies AG.

鸿途™H30 基于 SRAM 存储介质，采用数字存算一体架构，拥有极低的访存功耗和超高的计算密度，在 Int8 数据精度条件下，其 AI 核心IPU 能效比高达 15Tops/W，是传统架构芯片的7 倍以上。

鸿途™H30，12nm制程，256TOPS算力，功耗35W，支持外扩Memory，最高带宽为128GB/s，以及16路 FHD Encoder/Decoder，和PCIe 4.0，x8，x4，x2，RC&EP mode。 和其他智驾芯片不同，鸿途™H30最基本的组成单位是 自研存算单元 ，基于SRAM的纯数字设计，实现 存内运算 ，在 …