2016年11月29日 · Thanks to germanium’s small bandgap, a transistor with a germanium channel could require as little as a quarter of the energy that a silicon-channeled transistor needs to switch to a conducting ...

Abstract: A novel device for low-noise amplification-the germanium junction field-effect transistor (JFET)--is introduced. The properties of germanium and silicon at cryogenic temperatures are summarized.

2023年10月5日 · Due to using heterojunction of germanium/silicon in the tunneling interface, the on-state performance of our proposed device is more robust than Si-based doping-less TFETs.

2014年3月19日 · Chief among these new materials is germanium (Ge). This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack.

In this paper, we investigated two dimensional simulation study of a germanium source doping-less tunnel field effect transistor (TFET). Use of low band gap material such as germanium is an effective way to increase tunneling. By using germanium at only source side off current increases less in compare to whole germanium device.

2015年9月28日 · Abstract: We demonstrate Ge enhancement-mode nMOS FinFETs fabricated on 300-mm Si wafers, incorporating an optimized gate-stack (interface trap density D it below 2 × 10 11 eV -1 · cm -2), n + -doping (active doping concentration Nact exceeding 1 × 10 20 cm -3), and metallization (contact resistivity Pc below 2 × 10 -7 Ω · cm 2) modules.

2022年9月21日 · In this paper the performance analysis of nanowire has been presented. The comparison of Si Nanowire FET and Ge Nanowire FET has been carried out. The sub threshold slope of Si Nanowire FET is 74.50 mV/dec and in the case of Ge nanowire is FET 64.38 mV/dec.

2008年5月23日 · In this paper we give an overview of some of the major issues for Ge MOSFETs, including substrates, wet treatments, doping and junctions, gate stack passivations, germanidation, and postmetallization hydrogen annealing.

Chief among these new materials is germanium (Ge). This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on …

2011年1月1日 · This chapter reviews the recent results of work on silicon–germanium (SiGe) channel metal oxide semiconductor field effect transistors (MOSFETs), which are one of the most important electronic devices using SiGe alloys, as advanced complementary metal oxide semiconductor (CMOS) devices.