Epitaxial growth of high-quality GaN with a high growth rate at …
2024年5月13日 · The XRD-FWHM of GaN grown on the GaN/Si template and the bulk GaN substrate were 977 arcsec and 72 arcsec respectively. This work may be very promising to …
Structural properties of GaN layers grown on Al
2016年3月1日 · In the X-ray diffraction (XRD) measurement of GaN layer obtained, two kinds of equipments (Rigaku RINT-2000 and Bruker D8 Discover) were used to evaluate crystalline …
crystalline GaN is rich in well-defined structural features extending to high real-space distances, as it should be with a material possessing a perfect long-range atomic order.
X-ray diffraction (XRD) pattern of a representative GaN
In this paper, a high temperature annealing (HTA) method is proposed to characterize dislocations in GaN prepared by metal-organic chemical vapor deposition (MOCVD) on c-plane (0001) …
Demonstration of epitaxial growth of strain-relaxed GaN films on ...
2021年6月3日 · Strain modulation is crucial for heteroepitaxy such as GaN on foreign substrates. Here, the epitaxy of strain-relaxed GaN films on graphene/SiC substrates by metal-organic …
Determination of dislocation density in GaN/sapphire layers using XRD ...
2020年6月5日 · Wet etching of GaN layer confirms the values obtained from the XRD methods. In this paper, we show a novel measurement approach for determination of the threading …
Characterization of a 4-inch GaN wafer by X-ray diffraction topography
2018年11月16日 · We have investigated the crystal quality of a 4-inch GaN wafer by X-ray diffraction topography. GaN (11 4) diffraction images at various incident angles were obtained …
Temperature dependent lattice expansions of epitaxial GaN …
2021年7月5日 · In-situ X-ray diffraction (XRD), with the sample temperature stepwise increased up to 900 °C, together with ex-situ high-resolution XRD (HRXRD), has been used to study the …
In-situ X-ray diffraction analysis of GaN growth on ... - IOPscience
2020年6月12日 · In this paper, GaN growth on graphene-covered SiO 2 substrates is investigated using in-situ X-ray diffraction (XRD). So far, in most studies, graphene used for GaN growth …
GaN on Si (GoS) films for high frequency and high power transistors, such as HEMT are currently interested. In this report charactalization of AM-MEE (activity modulation migration enhanced …
- 某些结果已被删除