2017年1月25日 · X‐ray diffraction measurements exhibit that growth under high TMBi flow leads to a compositional inhomogeneity, as well as the presence of liquid can affect the Bi …

Selenium sulfide (SeS2) passivated GaAs is bonded with silicon substrate at 350°C. X-ray diffraction (XRD) analysis shows the formation of Ga–Se phase in the passivation process. …

We demonstrate how the formation of octahedral microcrystals of arsenic oxide As 2 O 3 in the form of arsenolite with a size of 200 nm to 10 μm can be initiated by the electrochemical …

2016年9月7日 · The XRD FWHM range of GaAs films on Ge/Si is 180–276 arcsec [19 – 21]. Thick Ge buffer layer can obtain high quality GaAs cells, but it reduces the optical loss of …

2009年6月16日 · We present a high-resolution X-ray diffraction pattern of periodic GaAs nanorod (NR) ensembles and individual GaAs NRs grown catalyst-free throughout a prepatterned …

X-ray diffraction (XRD) using synchrotron radiation (SR) is a powerful probe of thin-film crystalline materials. Several groups have combined SR-XRD with in situ molec-

Abstract Using methods of the X-ray diffraction and Raman backscattering were studied properties of AlGaAs/GaAs (100) MOCVD heterostructures which have been grown up at low …

Gallium arsenide (GaAs) nanoparticles' optical and emission properties can be tuned by changing their size across the visible spectrum. GaAs nanoparticles' optical characteristics are degraded...

2019年3月24日 · A very recent analysis 9 has cometo the conclusion that models similar to the ␨ (4ϫ2) modelcan interpret the x-ray diffraction data for the cation-rich͑001͒ surfaces of GaAs, …

2020年1月7日 · Two types of QD structures with the different compositions of capping layers: (Al0.30Ga0.70As (#1) and Al0.10Ga0.75In0.15As (#2)), are studied using the …