Gate-all-around FET (GAA FET) is a modified transistor structure where the gate contacts the channel from all sides. It’s basically a silicon nanowire with a gate going around it. In some cases, the gate-all-around FET could have InGaAs or other III-V materials in the channels.

2024年4月22日 · Enter the gate-all-around (GAA) transistor architecture, which extends device scaling while increasing chip performance and reducing power. GAA devices began to emerge at 3nm and are dominant at 2nm. Currently, high-performance mobile is leading the way in GAA adoption, with hyperscale servers and high-performance CPUs following closely behind.

2022年6月30日 · Samsung’s 3nm process is the industry’s first commercial production process node using gate-all-around transistor (GAAFET) technology, marking a major milestone for the field of silicon...

2023年12月7日 · Gate-All-Around FET (GAAFET) is a type of semiconductor three-dimensional transistor that is considered an evolution over FinFET (Fin Field-Effect Transistors). The comparison of GAAFET vs FinFET marks an advancement in multigate transistors, shifting the conducting channel from vertical fins to nanosheets.

2025年3月12日 · A research team from Peking University has published its findings on a two-dimensional, low-power GAAFET transistor, the first of its kind in the world.

Gate-all-around (GAA) is a promising MOSFET structure to continue scaling down the size of CMOS devices beyond 7 nm technology node. This paper gives an overvie.

2022年11月21日 · GAA, the next-generation semiconductor process technology, offers two unique advantages over FinFETs. First, GAA transistors solve many challenges associated with the leakage current since GAA channels are horizontal.

2023年4月17日 · GAAFET is that improved morphology. Instead of a unified fin going through a gate, the fin will be divided, vertically, into several channels with the gate in between. This further increases...

2023年12月6日 · This work reveals the potential for the current and future development of GAAFET technology and its potential for wider application in integrated circuits design and fabrication.

2021年9月15日 · Gate-All-Around Field Effect Transistor (GAAFET) technology is believed to be the successor to FinFETs, as it provides better device performance at smaller sizes such as below 7 nm. Nanowire and nanosheet structures are used for the fabrication of GAA transistors.