Short-range order of compressed amorphous GeSe 2 - Nature
2015年5月14日 · The structure of amorphous GeSe2 (a-GeSe2) has been studied by means of a combination of two-edges X-ray absorption spectroscopy (XAS) and angle-dispersive X-ray diffraction under pressures up to...
Unravelling the amorphous structure and crystallization …
2024年2月3日 · Based on XAS experiments, we develop a theoretical model of the amorphous GeTe structure, consisting of a disordered fcc-type Te sublattice and randomly arranged chains of Ge atoms in a ...
XAS/EXAFS studies of Ge nanoparticles produced by reaction between ...
2011年9月1日 · We used synchrotron X-ray absorption spectroscopy (XAS) at the Ge K edge with analysis of the EXAFS region combined with room temperature photoluminescence and TEM to characterise the nature of the nanoparticles and model compounds and to …
Two dimensional XAs (X = Si, Ge, Sn) monolayers as promising ...
2018年12月1日 · Herein, using first principle calculations, we systematically investigated a new kind of 2D XAs (X = Si, Ge, Sn). After verifying their stabilities, we found that SiAs and SnAs monolayers possess direct band gaps of 2.35 and 1.69 eV, while GeAs has an indirect band gap of 2.08 eV by HSE hybrid functional with the inclusion of spin-orbit ...
Discovery of Ge - ScienceDirect
2025年3月15日 · These multiply-compensated GECs in artificially irradiated quartz suggest that their precursors before irradiation involve the diamagnetic Ge 2+ state. Ge K -edge X-ray …
Ge K-edge XAFS of GeO2 glass at 58 GPa obtained by
The static focusing optics of the existing energy-dispersive XAFS beamline BL-8 have been advantageously exploited to initiate diamond anvil cell based high-pressure XANES experiments at the...
The Ge K-edge XAS signals of crystalline (c-GeSe2, dots
The Ge K-edge XAS signals of crystalline (c-GeSe2, dots) and amorphous (a-GeSe2) are compared in the left panel. Differences in the low k region and in the XAS amplitude are related to the ...
Ge/InxGa1-xAs异质结发光特性研究-学位-万方数据知识服务平台
本文将锗材料生长在InxGa1-xAs材料缓冲层上,作为发光二极管的本征层,通过InxGa1-xAs材料与锗材料的晶格失配,在锗材料中引入张应变,来研究Ge/InxGa1-xAs异质结的发光特性。
Structural and electronic transformations of GeSe2 glass under …
2024年4月2日 · Pressure-induced transformations in an archetypal chalcogenide glass (GeSe<sub>2</sub>) have been investigated up to 157 GPa by X-ray absorption spectroscopy (XAS) and molecular dynamics (MD) simulations. Ge and Se K-edge XAS data allowed simultaneous tracking of the correlated local structural and …
Ge K edge XAS spectra for two Ge-Sb alloy compositions.
The white line and X-ray absorption near edge spectros-copy (XANES) spectral regions of the Ge K edge, ∼11100 to 11112 eV, and between 11112 and 11180 eV and beyond, contain electronic structure...
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