The crystallinity of the pc-Ge films was evaluated by Raman spectroscopy and XRD diffraction. The laser-sintered films exhibited a Raman peak at 300 cm ⁻¹ and XRD 2θ peak at 27.35, which ...

2021年4月15日 · According to the Ge powder diffraction patterns (Joint Committee on Powder Diffraction Standards (JCPDS) 04–0545), both XRD results indicate that the Ge layers are polycrystalline without ...

Germanium (Ge) nanocrystals with and without multiwalled carbon nanotubes (MWCNTs) are synthesised in via solvothermal approach. The active anode material is characterized by X-ray Diffraction...

2016年3月1日 · X-ray diffraction (XRD) and Raman spectroscopy (RS) have been widely applied to the strain measurement of Ge. XRD can be employed to measure the strain within the scattering volume, whereas RS can be employed to measure the strain near the surface of the epitaxial Ge film.

2023年2月22日 · Scanning transmission electron microscopy (STEM) and X-ray diffraction (XRD) are used for structural characterization of the Ge layer. Secondary ion mass spectroscopy (SIMS) is utilized to evaluate the diffusion length of Si into Ge.

We report the realization of polycrystalline (poly)-Ge thin film on glass (insulator) at a significantly low temperature of ~170 °C. We realized it using Au induced layer exchange crystallization...

2015年12月4日 · In this study, we synthesize GeO x nanoparticles by chemical reduction of GeO 2 and comparatively investigate the freshly prepared sample and the sample exposed to ambient conditions. Although both...

2025年3月29日 · X-ray Diffraction (XRD) Analysis. Figure 2 presents the XRD patterns for the Ge 35 Se 65 TFs, both as-deposited and annealed at 373 and 523 K. The analysis indicates that both the deposited and annealed films exhibit a crystalline structure, with a noticeable enhancement in crystallinity following the annealing process.

2005年12月5日 · The strain, composition and thermal stability of the channel and VS in Ge/Si 1−x Ge x structures for p-HMOS devices was studied by XRD reciprocal space maps and RBS. Samples with nominally 100% Ge and thicknesses of 16 and 20 nm, as deposited and after annealing at 650 °C, were studied.

2018年11月13日 · In this work, we present a new approach of creating tensilely strained intrinsic Ge films on Si substrates through physical vapor deposition of solid Ge sources. Compared to the toxic Ge...