实现下一代“存内计算”的关键：铁电记忆体的挑战与未来机会
2022年3月9日 · Near-Memory Computing是透过先进封装技术以晶片层级整合（die-level integration）将运算晶片与记忆体晶片整合在一起，或将运算电路与记忆体电路以积层 …
A ferroelectric fin diode for robust non-volatile memory - Nature
2024年1月13日 · The simple structure of metal/ferroelectric/metal in FTJ allows a high memory density, but the few-nanometers-thick ferroelectric films for direct tunneling suffer from poor …
Ferroelectric HfO2 Tunnel Junction Memory With High TER
2018年12月11日 · We have investigated device design of HfO 2 -based ferroelectric tunnel junction (FTJ) memory. Asymmetry of dielectric screening property in top and bottom …
浅谈铁电存储器：如何实现下一代内存计算？-电子工程专辑
2022年2月23日 · 目前大多数报导的FTJ 存储器其操作电压可在4V 以下，操作速度介于10-100 ns 之间，具备低写入功耗与非破坏性读取等优点，明显优于传统的Flash。 另外，FTJ 存储器 …
Memory and Synaptic Devices Based on Emerging 2D Ferroelectricity
2023年6月20日 · Conventional ferroelectric memory devices can be classified as either FeFET [33, 35, 36] or FTJ [41, 42, 71] devices. The two types of memory devices operate using …
Breakdown Lifetime Analysis of HfO2-based Ferroelectric ... - IEEE …
2020年4月28日 · We clarified breakdown mechanisms of HfO2-based ferroelectric tunnel junction (FTJ) memory via systematic time-dependent dielectric breakdown (TDDB) measurement
Comparative study of usefulness of FeFET, FTJ and ReRAM …
2021年11月28日 · From a computer architecture and arithmetic perspective, one of the most attractive features of non-volatile memory technologies and memristive devices is their ability …
3D Nano Hafnium-Based Ferroelectric Memory Vertical Array for …
2024年11月19日 · Here, based on zirconium-doped hafnium oxide (Hf 0.5 Zr 0.5 O 2, HZO) ferroelectric thin films, we prepare a 3D stacked ferroelectric memory array for vertically …
淺談鐵電記憶體：如何實現下世代「記憶體內運算」？ | TechNews …
2022年2月22日 · Near-Memory Computing 是透過先進封裝技術以晶片層級整合（die-level integration）將運算晶片與記憶體晶片整合在一起，或將運算電路與記憶體電路以積層 …
A Low-Power Ternary Adder Using Ferroelectric Tunnel Junctions
2023年2月28日 · In this work, we propose a low-power adder using a Ferroelectric Tunnel Junction (FTJ). FTJs are two-terminal devices where the data is stored in the polarization state …