2024年1月13日 · The simple structure of metal/ferroelectric/metal in FTJ allows a high memory density, but the few-nanometers-thick ferroelectric films for direct tunneling suffer from poor endurance (Fig. 1b)...

最简单的铁电存储器设计，FeRAM，将金属/铁电/金属电容器集成到 BEOL 工艺中，在每个单元下方放置一个传统的 MOSFET。 为了存储数据，电场在 P- 和 P+ 极化状态之间切换电容器。 不幸的是，读取极化值是一种破坏性操作，之后必须重写单元，正如罗切斯特理工学院的 Shan Deng 及其同事在 2021 年 GLSVLSI 会议上介绍的工作中所解释的那样。 因此，商业 FeRAM 应用需要异常高的耐久性，高于 104 周期。 基于 掺锆 HfO2 电容器 的存储器很有吸引力，因为它们与现 …

2020年4月28日 · We clarified breakdown mechanisms of HfO 2-based ferroelectric tunnel junction (FTJ) memory via systematic time-dependent dielectric breakdown (TDDB) measurement for realization of reliable in-memory reinforcement learning (RL) system.

2022年2月23日 · 目前大多数报导的FTJ 存储器其操作电压可在4V 以下，操作速度介于10-100 ns 之间，具备低写入功耗与非破坏性读取等优点，明显优于传统的Flash。 另外，FTJ 存储器高／低电阻比例（TER ratio）或称ON／OFF比例大概介于10-100 之间。

2018年12月11日 · We have investigated device design of HfO 2-based ferroelectric tunnel junction (FTJ) memory. Asymmetry of dielectric screening property in top and bottom electrodes is the key for high tunneling electroresistance (TER) ratio. Thus, metal and semiconductor electrodes are proposed.

Based on the readout procedure, three different ferroelectric memory concepts can be discriminated: FeRAM, FeFET and FTJ. In this paper, the applicability of the three different concepts towards the main memory application categories as well as the applicability towards non von-Neumann computing solutions is discussed.

2022年3月9日 · Near-Memory Computing是透过先进封装技术以晶片层级整合（die-level integration）将运算晶片与记忆体晶片整合在一起，或将运算电路与记忆体电路以积层型（monolithic）的制程方式，进行垂直式元件层级整合（device-level integration），目标均是让资料运算单元与记忆储存单元两者更为接近，减少传输的距离。 克服冯诺伊曼架构限制的In …

2024年11月19日 · Here, based on zirconium-doped hafnium oxide (Hf 0.5 Zr 0.5 O 2, HZO) ferroelectric thin films, we prepare a 3D stacked ferroelectric memory array for vertically computing-in-memory. Single device was fabricated in the structure of W/Hf 0.5 Zr 0.5 O 2 /W and 3D structure is integrated up to 4 layers vertical devices.

2023年6月20日 · FTJ devices, with a thin ferroelectric potential barrier sandwiched between two electrodes, have been extensively investigated for non-volatile memory devices due to their promising performance with high data density, fast operation, and low operation energy.

2018年12月11日 · We have investigated device design of HfO2-based ferroelectric tunnel junction (FTJ) memory. Asymmetry of dielectric screening property in top and bottom electrodes is the key for high tunneling...