The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry ...

IRF9540由onsemi (安森美)设计生产，立创商城现货销售。 IRF9540价格参考￥3.28。 onsemi (安森美) IRF9540参数名称：类型：1个P沟道；漏源电压 (Vdss)：100V；连续漏极电流 (Id)：19A；导通电阻 (RDS (on))：200mΩ@10V,11A；耗散功率 (Pd)：150W；阈值电压 (Vgs (th))：4V；工作温度：-55℃~+175℃@ (Tj)。 下载IRF9540中文资料、引脚图、Datasheet数据手册，有场效应管 (MOSFET)详细引脚图及功能的应用电路图电压和使用方法及教程。

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

2024年5月15日 · Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

8 www.irf.com lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185)

IRF9540NPBF – P-Channel 100 V 23A (Tc) 140W (Tc) Through Hole TO-220AB from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These fea-tures combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. Max. Breakdown Voltage Temp. Coefficient. Max.

F9540N. Manufacturer: International Rectifier. File Size: 152.70kb. Download: Datasheet. Description: irf9540n. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance p

Description: Power MOSFET (Vdss=-100V, Rds (on)=0.117ohm, Id=-23A). 18 Results. Datasheet: 1MbKb/10P. Manufacturer: Kersemi Electronic Co., Ltd..