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    ScienceDirect
    https://www.sciencedirect.com › science › article › pii

    Design and optimization of a buried channel PMOS

    • A strained Si1−xGex-channel PMOSFET, fully integrable in a standard Si1−xGex BiCMOS process is proposed. It uses an n+-polysilicon emitter of the bipolar transistor as the gate, and has a p-type Si1−xGex cha… 展开

    Keywords

    Silicon–germanium
    Buried channel
    PMOSFET
    BiCMOS
    Simulation… 展开

    ScienceDirect
    1. Introduction

    Strained Si1−xGex layers have been extensively pursued to improve the performance of bipolar and CMOS technologies, as strain offers device designers the ab… 展开

    ScienceDirect
    2. Process integration and proposed device

    The main feature of the baseline process is the non-selective Si/Si1−xGex epitaxy, which is used to form the intrinsic base layer of the NPN and the poly-Si base electrode in a sin… 展开

    ScienceDirect
    3. Simulation details

    DIOS and DESSIS programs of ISE (now Synopsys) were used for process and device simulations, respectively. Strain in pseudomorphic Si1−xGex layer affects dopant diffusiviti… 展开

    ScienceDirect
    4. Optimization strategy and semi-analytical modeling

    Optimization was done on the design parameters shown in Fig. 3: (a) Ge profile (Ge fraction, x and Si1−xGex layer thickness, tSiGe), (b) cap layer thickness (tcap), (c) p-typ… 展开

    ScienceDirect
    Do buried and surface channel pmosfets have short channel effects?
    In this paper, the short channel effects in buried and surface channel pMOSFETs are studied. The effective channel length, threshold voltage, source–drain series resistance, carrier mobility in various temperature ranges and the drain-induced-barrier-lowering effect are investigated.
    sciencedirect.com