Here, we report the systematic experimental measure-ments of important physical properties of BAs, including the bandgap, optical refractive index, elastic modulus, shear modulus, Poisson’s ratio, thermal expansion coefficient, and heat capacity.

2023年1月4日 · Our results suggest that BAs has great potential as a next-generation semiconductor and demonstrates the capability of SUEM to image photocarrier transport in emerging materials. Cubic boron arsenide (BAs) is promising for microelectronics thermal management because of its high thermal conductivity.

Recent measurements of an unusual high thermal conductivity of around 1000 W m-1 K-1 at room temperature in cubic boron arsenide (BAs) confirm predictions from theory and suggest potential...

2023年1月1日 · For the first time, crystalline BAs has been successfully synthesized via a simple wet chemical route using arsenic trioxide and sodium borohydride as boron precursor. XRD analysis gives an indication of the formation of BAs with a very short range order, which was further confirmed from SEM, TEM and XPS.

2019年4月5日 · Figures 1(a) and 1(b) present the morphology and the X-ray diffraction (XRD) patterns of the large surface of millimeter scale high-quality BAs single crystals, respectively. It is clear that most of the single crystals grow with the {111} face as the largest surface when they grow into a plate-like shape.

2023年12月24日 · The XRD pattern (black) of Sample 12 annealed for 10 min shows a good match with the BaS 2 reference pattern in red (a), whereas Sample 13 annealed for 15 min matches with BaS 3 (b). The Temperature curves for Samples 12 and 9 annealed for 10 ( c ) and 30 min ( d ), respectively, demonstrate, that a temperature slightly above 300 °C is needed ...

In this work, a pressureless manufacturing route that enables the formation of barium aluminosilicate (BAS) glass-ceramic consisting of internal β-Sialon fibers with enhanced thermal conductivity...

2016年12月14日 · In this work, we measure the phonon dispersion of BAs along high symmetry directions using inelastic x-ray scattering (IXS) and compare with first-principles calculations.

2022年11月23日 · Here we measured high-pressure thermal transport in a recently discovered semiconductor material, cubic boron arsenide (BAs), and observed anomalous pressure dependence of the thermal...

2016年12月14日 · Cubic boron arsenide (BAs) was predicted to have an exceptionally high thermal conductivity (k) ∼ 2000 W m − 1 K − 1 at room temperature, comparable to that of diamond, based on first-principles calculations.