
Dynamic End of Round (EoR) Screens - Nexus Mods
2025年3月19日 · Thank you to the various devs of bf2 for the amazing work on the game (and the captures from your ArtStation profiles). This mod allows you to have a different EoR background for every map! MP Safe. If no custom background is available/set by the logic it …
Carbon co-implantation碳共注入工艺学习笔记 - 知乎
Ge能量较低(2k/5k)时与只注入B的表现相差不大,B堆积在射程末端(EOR,End-Of-Range)缺陷区域,C共注入技术没有明显改善结的突变;Ge在更高的能量下(≥10k),B分布的突变性得到改善,在深度小于20nm的近硅表面区域,B的激活增加,浓度提高。
高剂量 BF2 注入硅中硼扩散的模拟,Japanese Journal of Applied …
我们模拟了在硅中非晶化 bf2 离子注入后硼 (b) 的瞬态增强扩散 (ted)。 基于 B 扩散模型、自填隙簇 TED、B 簇和 B 沉淀以及范围末端 (EOR) 缺陷模型进行统一模拟。
Enhanced dopant activation and elimination of end-of-range …
2001年12月10日 · Enhanced dopant activation and elimination of end-of-range (EOR) defects in BF2+-implanted silicon-on-insulator (SOI) have been achieved by high-density current stressing. With the high-density...
硼注入预非晶化硅的瞬态增强扩散建模:BF2 ... - X-MOL
2001年3月1日 · 我们已经模拟了存在由 Ge 非晶化和 BF2 注入产生的范围末端 (EOR) 缺陷的瞬态增强扩散 (TED)。 EOR 缺陷的奥斯特瓦尔德熟化已被考虑在内。 退火剖面与等效 B 注入的比较表明,现有模型不足以模拟硼扩散深度非常低的 BF2 实验剖面。 我们已经提出,氟的存在可以作为间隙硼的吸收池,因此降低了硼的扩散深度,以获得良好的实验曲线近似值。 © 2001 Elsevier Science BV 保留所有权利。 我们已经模拟了存在由 Ge 非晶化和 BF2 注入产生的范围末端 …
Modeling of the transient enhanced diffusion of boron implanted …
2001年3月22日 · We have simulated transient enhanced diffusion (TED) in the presence of end-of-range (EOR) defects produced by Ge amorphization followed by BF 2+ implantation. Ostwald ripening of EOR defects has been taken into account.
Comparative study on EOR and deep level defects in …
2008年8月1日 · In this work, we study the thermal behavior of end-of-range (EOR) defects formed in Ge^+ (35 KeV, 1 × 10^15 cm^−2) pre-amorphized silicon at room temperature. Using low-temperature photoluminescence …
Simulation of Boron Diffusion in High-Dose BF2 Implanted Silicon
2000年4月15日 · We have simulated the transient enhanced diffusion (TED) of boron (B) after amorphizing BF2 ion implantation in silicon. A unified simulation is done based on the models for B diffusion, for TED...
Simulation of Boron Diffusion in High-Dose BF2 Implanted Silicon ...
2000年4月1日 · We have simulated the transient enhanced diffusion (TED) of boron (B) after amorphizing BF 2 ion implantation in silicon. A unified simulation is done based on the models for B diffusion, for TED by self-interstitial clusters, for B clustering and B precipitation, and for end-of-range (EOR) defects.
Galactic Conquest and ROTS Main Menu Frontend and EOR Screen Music
2021年5月15日 · Replaces the frontend and/or EOR screen music with a selection of classic BF2 Galactic Conquest and ROTS main menu tracks.