Atmospheric-Pressure CVD (APCVD) reactors were the first to be used in the microelectronics industry. Operation at atmospheric pressure keeps reactor design simple and allows high deposition rates. However, the technique is susceptible to gas-phase reactions and the films typically exhibit poor step coverage.

2019年1月27日 · An atmospheric pressure chemical vapor deposition (APCVD) system uses atmospheric pressure or 1 atm in the reaction chamber. APCVD is compatible with vacuum free, continuous in-line processes, making it very attractive for cost sensitive, high volume manufacturing applications like PV cell manufacturing.

2023年8月11日 · APCVD（Atmospheric Pressure Chemical Vapor Deposition），即常压化学气相沉积。 顾名思义，与其他常见的气相沉积方法相比，APCVD的主要特点是在常压条件下进行，无需使用高真空设备。 APCVD会在晶圆或其他类型的基板上沉积一层通常为几微米厚的材料。 APCVD的应用： 在微电子器件中，APCVD可用于沉积绝缘层，如二氧化硅（SiO2）。 二氧化硅常用作绝缘层，用于隔离电气隔离度不同的电子元件和导线，它可以防止电流泄漏和相互干 …

2025年1月3日 · One common CVD method is atmospheric pressure chemical vapor deposition (APCVD), which is used to deposit coatings fabricated from gaseous precursors onto an appropriate substrate. Additionally, the reaction chamber pressure in the APCVD process is near atmospheric heaviness, preferably about single unit of atmospheric heaviness.

APCVD is a CVD method at normal pressure (atmospheric pressure) which is used for deposition of doped and undoped oxides. The deposited oxide has a low density and the coverage is moderate due to a relatively low temperature. Because of improved tools, the …

2010年8月1日 · Our studies on the APCVD deposition of SnO2:F reveal the influence of different types of precursors and process conditions on the transmittance, morphology and conductance of the film. It is shown that a high transmittance (80%) and low resistivity ( 4.0 ⋅ 1 0 − 4 Ω ⋅ c m ) film can be obtained in combination with an intrinsic surface ...

APCVD. Figure 7.13b shows schematic diagram for APCVD. This technique does not require any vacuum. At slightly reduced pressure to atmospheric (-100-10 kPa), it can be performed in continuous process with transporting a mass of deposited gas into the substrate, which is at temperature in between 300°C and 400°C.

2018年3月20日 · APCVD growth of graphene is a chemical synthesis process at atmosphere pressure for the formation of SLG or FLG on an arbitrary substrate by exposing the substrate to the gas-phase precursors at controlled reaction conditions .

常压化学气相沉积（APCVD）工艺是 CVD 技术的一种变体，用于在基底上沉积薄膜。 与在低压或真空条件下运行的传统 CVD 不同，APCVD 是在大气压力下进行的。 这种方法涉及气态前驱体之间的化学反应，这些前驱体在基底表面分解或反应形成固态薄膜。 由于 APCVD 能够生产出高质量、均匀且经济高效的涂层，因此被广泛应用于半导体、光电子和材料科学等行业。 该工艺无需复杂的真空系统，因此在大规模生产中尤其具有优势，使其在工业应用中更加方便、高效。 大气 …

2015年3月17日 · APCVD is a thin film deposition process with typically high deposition rates. CVD Equipment Corporation offers solutions to scale up your APCVD processes from research to production volumes. Our APCVD systems are used to deposit a layer of material typically several micrometers thick onto wafers or other types of substrates.