Low-temperature atomic layer epitaxy of AlN ultrathin films by …
2017年1月3日 · Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a...
Structural characterization of AlN thin films grown on sapphire by ...
2023年5月31日 · The surface morphology and the phases of the AlN films grown on sapphire wafers with diverse surface orientations were investigated by atomic force microscope (AFM) and X-ray diffraction (XRD). The surface chemical states of the deposited AlN thin films were determined by X-ray photoelectron spectroscopy (XPS).
XRD Characterization of AlN Thin Films Prepared by Reactive …
X-ray diffraction (XRD) shows that AlN film has (110) orientation of wurtzite crystal structure for R-Al 2 O 3 and (001) orientation for SiO 2 -glass and C-Al 2 O 3 substrates.
X-ray diffraction pattern of fine AlN powder. - ResearchGate
Recently, aluminum nitride (AlN) has attracted much attention because of its unique combination of properties like high thermal conductivity ( $ 320 W/mK), high electrical resistivity ( > 10 16 V...
Development of 100 mm AlN Single‐Crystal Growth and …
2025年3月31日 · The AlN substrates were tested using XRD to evaluate the crystal quality along with the geometric substrate parameters such as thickness, TTV, wrap, bow, and miscut.
Effects of a 50 nm AlN intermediate layer on the properties of Al
The crystal structure of the AlScN films was characterized using a high-throughput X-ray diffractometer (XRD, D8 ADVANCE) with Cu Kα radiation (λ = 0.154187 nm) to measure the crystal structure and orientation of AlN.
Structural and optical properties of AlN/GaN and AlN/AlGaN/GaN …
2019年3月1日 · The structural and optical properties of the prepared AlN/GaN and AlN/AlGaN/GaN layer heterostructures were investigated by means of atomic force microscope (AFM), X-ray diffraction (XRD), photoluminescence spectroscopy (PL) and Raman spectroscopy.
High-quality AlN grown with a single substrate temperature …
2017年8月2日 · 1.5-μm AlN grown by metal-organic chemical vapor deposition (MOCVD), with a single substrate temperature of 1180 °C, exhibits atomically flat surface and the XRD (102) peak width of 427 arcsec.
shows the X-ray diffraction XRD patterns of AlN thin
The XRD pattern was almost same at growth temperature 1340 °C as shown in Figure 1 with high preferential AlN (002) orientation. AlN layer displayed a higher degree of crystallization with ...
X-ray radiation excited ultralong (>20,000 seconds) intrinsic
2020年8月28日 · Here, we present an ultralong intrinsic phosphorescence (>20,000 seconds) in AlN single-crystal scintillator through X-ray excitation. We suggest that the long afterglow emission originates from...
- 某些结果已被删除