Impact of atomic layer deposition temperature on electrical and …
2024年6月1日 · High conductivity and transparency are achieved using AZO layers deposited at 200 °C. This work highlights the impact of growth temperature on the electrical and optical …
Synthesis and characterization of Al-doped ZnO and Al/F co …
2023年6月1日 · In this paper we report the morphological, textural, electrical and optical properties of AZO thin films of varied Al precursor pulses content (1.67 % to 10 %) prepared …
The AZO thin film is deposited successfully by atomic layer deposition (ALD). 50 nm-thick AZO film with high uniformity is checked by scanning electron microscopy. The element …
Properties of AZO films grown by ALD applied as a TCO layer in ...
2024年5月15日 · In this work, we demonstrate that AZO can be successfully deposited by the atomic layer deposition (ALD) technique. The results showed that it is possible to dope ZnO …
Optical and electrical properties of Al-doped ZnO thin films
The present work highlights the low temperature deposition of Al-doped ZnO (AZO) thin films by atomic layer deposition (ALD). The effects of Al doping concentration and substrate …
Atomic Layer Engineering of Aluminum‐Doped Zinc Oxide Films …
2022年5月15日 · Here, the effect of deposition sequence in the ALD process of aluminum-doped zinc oxide (AZO) films on the performance and stability of PSCs is investigated. Particularly, …
ALD法制备AZO薄膜及光电性质研究 - 豆丁网
2016年10月7日 · 本文中，我们以二乙基锌，三甲基铝作为氧化锌和三氧化二铝的金属前躯体，水. 作为氧源，在衬底透明衬底上用原子层沉积的方法制备了Al含量分别为1%，2%，3% 的AZO …
沉积后处理对 ALD Al 掺杂 ZnO 薄膜性能的影响,Nanomaterials - X …
2023年2月22日 · 在本文中，采用原子层沉积（ALD）技术生长铝掺杂氧化锌（ZnO:Al 或 AZO）薄膜，并研究了沉积后紫外-臭氧和热退火处理对薄膜性能的影响。 X射线衍射（XRD）揭示了 …
A core–shell AZO@ZnO nanostructure for accurate glucose
2025年3月27日 · Preparation of AZO@ZnO core–shell nanostructure by composite ALD Process with hydrothermally synthesized method. The preparation process for a 3D glucose sensor …
High doping efficiency Al-doped ZnO films prepared by co …
2021年12月5日 · AZO films are prepared by simultaneously injected metal precursor spatial ALD. Al doping of 1% yields the lowest resistivity comparable to indium tin oxide. High doping …