
Adrenoleukodystrophy - Wikipedia
Adrenoleukodystrophy (ALD) is a disease linked to the X chromosome. It is a result of fatty acid buildup caused by failure of peroxisomal fatty acid beta oxidation which results in the accumulation of very long chain fatty acids in tissues throughout the body.
Adrenoleukodystrophy - Symptoms and causes - Mayo Clinic
2020年2月7日 · In adrenoleukodystrophy (ALD), your body can't break down very long-chain fatty acids (VLCFAs), causing saturated VLCFA s to build up in your brain, nervous system and adrenal gland. The most common type of ALD is X-linked ALD, which is caused by a genetic defect on the X chromosome.
Atomic layer deposition - Wikipedia
Atomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process; it is a subclass of chemical vapour deposition. The majority of ALD reactions use two chemicals called precursors (also called "reactants").
Adrenoleukodystrophy - StatPearls - NCBI Bookshelf
2020年11月8日 · Adrenoleukodystrophy is a rare genetic peroxisomal disorder characterized by the abnormal metabolism of very long-chain fatty acids (VLCFAs) due to mutations in the ABCD1 gene. This leads to the accumulation of VLCFAs, particularly affecting the brain, spinal cord, adrenal glands, and testes.
腎上腺腦白質失養症 - 维基百科,自由的百科全书
腎上腺腦白質失養症(ALD, Adrenoleukodystrophy),是一種腦內去髓鞘化白質化的遺傳病,其通常分作兒童型腦白質化、青少年大腦型、腎上腺脊髓性神經病變型及女性異型合子病徵基因型。
WIPCOOL Heated Diode Refrigerant Leak Detector ALD-2
ALD-2: Sensor Type: Heated diode gas sensor: Minimum Detectable Leakage: ≤3 g/year: Reaction Time: ≤3 seconds: Warm-up Time: 30 seconds: Reset Time: ≤10 seconds: Operating Temperature Range: 0-50℃ Operating Humidity Range: <80%RH(non-condensing) Applicable Refrigerant: CFCs, HCFCs, HFCs, HCs and HFOs: Sensor Lifetime: ≥1 year: Reset:
Shock Bushing Kit | ALD-2 - Aldan American
Replacement kit for one pair of Aldan coil-overs or shocks. Includes 8 polyurethane bushings (Two Per Shock Eyelet) and Four, 1/2 in. steel sleeves. Made in USA.
ALD-2 (Atomic Layer Deposition) : POSTECH 반도체기술융합센터
No.ItemsDescription1Standard Process Al2O3, ZnO2PrecusorTMA, DEZ3Process Tempmerature0~250˚C4Wafer Sizeup to 8-inch 5Vacuum GaugeProcess Gauge: Batatron GaugeVacuum Check: Convactrom Gauge, ATM sensor6막질 Uniform<±2%78910
第三十六章 原子层沉积(ALD)技术 - 知乎 - 知乎专栏
原子层沉积(atomic layer deposition-ALD)又称 原子层外延方法 (atomic layer epitaxy-ALE)最初是由芬兰科学家于上世纪70年代提出。到了20世纪90年代中期,人们对这一技术的兴趣在不断加强,这主要是由于微电子和深亚微米芯片技术的发展要求器件和材料的尺寸不断 ...
Siemens ALD-2I Analog Loop Driver for MXL - Fire Alarm
The Model ALD-2I from Siemens Industry, Inc. is an optional MXL/MXLV/MXL-IQ network module that connects intelligent addressable devices to the MXL/MXLV/MXL-IQ System. The module uses two consecutive network addresses on the System. Devices connected to the ALD-2I circuits are supervised by the MXL Control Panel.