2018年8月29日 · Considering the case of mono- and by-layered MoS2, bimodal atomic force microscopy (AFM) was used in combination to the finite element method to map the effective spring constant between the...

Large-scale, high-quality, and uniform monolayer molybdenum disulfide (MoS 2) films are crucial for their applications in next-generation electronics and optoelectronics. Epitaxy is a mainstream technique for achieving high-quality MoS 2 films and is demonstrated at a wafer scale up to 4-in.

2019年6月13日 · The angstrom resolution capabilities of three-dimensional AFM are exploited to image the interfacial water organization on graphene, few-layer MoS2 and few-layer WSe2.

2022年6月9日 · The atomic force microscopy (AFM) methods have allowed basic studies of friction mechanisms on atomically thin 2D materials which intensively address how...

2021年2月1日 · Atomic force microscopy (AFM) tip-based cleaning is a reliable technique to remove interface contaminants and flatten heterostructures. Here, we demonstrate AFM tip-based cleaning applied to hBN-encapsulated monolayer MoS 2 transistors, which results in electrical performance improvements of the devices.

2022年10月1日 · Atomic force microscopy (AFM) measures film thickness and examines surface topography. The statistical analysis of variance (ANOVA) technique is applied to assess temperature effects and validate AFM findings. The growth temperature affects film thickness, surface roughness and grain size.

2019年4月12日 · This study sheds light on the AFM operation when one expects to achieve high-resolution AFM imaging of 2D materials by combining the tip radius with vertical tip–sample distances.

2013年10月29日 · We report on the modulation of tunneling resistance in MoS 2 monolayers using a conductive atomic force microscope (AFM). The resistance between the conductive AFM probe and the bottom electrode separated by a monolayer MoS 2 is reversibly reduced by up to 4 orders of magnitude, which is attributed to enhanced quantum tunneling when the ...

近期， 北京师范大学化学学院刘楠教授团队 在该领域取得了新突破相关成果发表在 Advanced Functional Material （IF：18.8）上发表了题为“One-Interlayer-Twisted Multilayer MoS2 Moiré Superlattices”的论文（DOI: 10.1002/adfm.202111529）。 （1） 低维纳米材料 的设计及制备。 以化学气相沉积技术（CVD）为基础，实现低维金属或半导体在微纳米尺度的设计、组装及制备，与高分子弹性基底可控接触，发展多功能、高性能的超薄柔性材料，为柔性可穿戴光电器件 …

MoS2作为过渡金属硫化物的典型代表，由于其独特的结构和特性成为极具发展潜力的新型二维材料。 ... 通过使用TEM，XPS，XRD，AFM及Zeta电位分析一系列表征手段对制备得到的MoS2纳米颗粒进行了表征，得到了平均粒径为3.7nm、厚度为2～4nm的分散性良好的MoS2纳米颗粒。