半导体工艺常见问题（二） - 知乎专栏
扫描电镜（SEM）技术可以用来测量结深与薄膜厚度，结深由相片和扫描电镜比例因子决定。 30.量测时的spec有什么作用？ Spec作用在于所做工艺过程通过结果量测判断是否在可接受范 …
In-Cell Overlay Metrology By Using Optical Metrology Tool
2018年10月26日 · AEI overlay metrology is often done with a CD-SEM in order to measure in-cell, on-device, and at design rule. Typically, AEI metrology for bias compensation is done on a …
An Innovative Graphical Platform for Real Time Accurate AEI …
In this paper, a real-time accurate AEI overlay prediction method will be introduced. It is based on the latest generation 5D Analyzer Workflow, a highly customizable and programmable …
验证利用AEIOVL补偿套刻精度是否有效的方法与流程
2023年10月30日 · 一般在曝光、显影之后对晶圆进行adi(显影后检查)ovl量测，某些特殊刻蚀工艺会对晶圆的aei(刻蚀后检查)ovl影响较大，实际生产中也可以经过aei ovl补偿反馈，改善adi ovl …
Study on overlay AEI-ADI shift on contact layer of advanced …
2016年3月8日 · We have showed the wafer level OVL AEI-ADI shift (AEI: After Etch Inspection; ADI: After Developing Inspection; AEI-ADI: AEI minus ADI). Within the shot level map, there …
Device-correlated metrology for overlay measurements - SPIE …
2014年10月6日 · The optical OVL of the ADI and AEI can be measured in most cases. The AEI shift as measured by CD-SEM requires measuring both elements (target and device) at the …
第一节：（4）逻辑工艺线上量测简介 - CSDN博客
2022年6月11日 · 本文介绍了半导体制造中的线上量测技术，包括CDSEM、HV CDSEM、Ellipsometry和OCD（SCD）。 CDSEM用于量测特征尺寸和表面形貌，HV CDSEM适用于深 …
Investigation into PR profile representation through method of OVL ...
The OVL focus subtraction map can well match the OVL AEI-ADI offset map. Investigation into this interesting correlation finally leads to the conclusion of PR tilting. The method of OVL …
验证利用AEI OVL补偿套刻精度是否有效的方法 - 百度学术
本申请提供一种验证利用AEI OVL补偿套刻精度是否有效的方法,包括:若显影后套刻标记图形和刻蚀后套刻标记图形存在所述补偿偏差,则套刻偏差;获取特征图形偏差;根据套刻偏差和特征图形偏 …
Study on overlay AEI-ADI shift on contact layer ... - SPIE Digital …
2016年3月8日 · In this paper, we present a study on the overlay (OVL) shift issue in contact (CT) layer aligned to poly-silicon (short as poly) layer (prior layer) in an advanced technology node …