7N60-VB_VBsemi (微碧半导体)_7N60-VB中文资料_PDF手册_价格
台积电流片，长电科技封装；是一款单N型功率MOSFET，具有高性能和可靠性。 采用平面工艺（Plannar），适用于各种功率电子应用，提供可靠的电气特性和稳定的性能。 TO220；N—Channel沟道,650V；2A；RDS (ON)=4000mΩ@VGS=10V,VGS=30V；Vth=2~4V； 管装. 2.68克 (g) 7N60-VB由VBsemi (微碧半导体)设计生产，立创商城现货销售，正品保证，参考价格￥3.28，封装为TO-220AB-3。 商城还提供7N60-VB专业中文资料、详细参数、引脚图 …
7N60 Datasheet (PDF) - Unisonic Technologies
The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
7N60 Datasheet, PDF - Alldatasheet
Description: 7.4 Amps, 600 Volts N-CHANNEL MOSFET. 213 Results. Datasheet: 470Kb/5P. Manufacturer: Estek Electronics Co. Ltd.
650 V @ TJ=150°C现出色低导通电阻和更低栅极电荷性能的高压超级结(SJ)MOSFET 系列产品。 这项技术专用于最小化导通损耗并提供卓. 典型值RDS(on) = 530 m Ω越的开关性能、dv/dt 额定值和更高雪崩能量。 因此,SuperFET. 低有效输出电容(典型值Coss(eff.)= 60 pF)器/ 电信电源、平板电视电源、ATX 电源及工业电源应用。 MOSFET 最大额定值TC =25°C除非另有说明。 电气特性TC =25°C除非另有说明。 / ΔTJ. 重复额定值:脉冲宽度受限于最大结温。 2. IAS = 3.5 A, VDD = …
7N60,7N60 pdf,7N60中文资料,7N60引脚图,7N60电路_datasheet网
7N60 7 Amps，600Volts N-Channel MOSFET Description The ET7N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor …
This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength.
7N60 Datasheet - 600V, 7.4A, N-Ch, Power MOSFET
2022年2月24日 · Function: 7.4A, 600V, N-CHANNEL MOSFET. Package: TO-220AB, TO-263. Manufacturer: Unisonic Technologies. Images: The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
7N60-ASEMI场效应管7N60_7n60参数和管脚图-CSDN博客
2021年12月16日 · 7n60在to-220封装里引出3个引脚，是一款低功耗场效应管。7n60的脉冲二极管正向电流(ism)为28a，漏源击穿电流(idss)为1ua，其工作时耐温度范围为-55~150摄氏度。7n60的栅源电压(vgs)为±30v，导通电阻rds(on)为1.2Ω。
7N60 Series Pin Assignment P: TO-220AB F: TO-220FP 条管装 盒装箱装 50Pcs 1000Pcs FQP7N60C FQPF7N60C H7N60P H7N60F 7N60 HAOHAI 工业型号 公司型号 通俗命名 H 封装标识 包装方式 每管数量 每盒数量 每箱数量 7N60 Series 7A, 600V, N沟道 场效应晶体管 产品参数规格书 N-Channel MOSFET TO-220AB TO-220FP
7N60 Datasheet and Replacement. Cross Reference Search - All …
UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.