50N06由UMW (友台半导体)设计生产，立创商城现货销售，正品保证，参考价格￥0.575，封装为TO-252-2。 商城还提供50N06专业中文资料、详细参数、引脚图、PCB焊盘图，典型应用图，Datasheet数据手册等资料查询和免费下载。 参数：类型：1个N沟道；漏源电压 (Vdss)：60V；连续漏极电流 (Id)：50A；导通电阻 (RDS (on))：16mΩ@4.5V,20A；耗散功率 (Pd)：105W；阈值电压 (Vgs (th))：1V；栅极电荷量 (Qg)：50nC@10V；输入电容 …

These N−Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.

FQP50N06由onsemi (安森美)设计生产，立创商城现货销售，正品保证，参考价格￥16.93，封装为TO-220。 商城还提供FQP50N06专业中文资料、详细参数、引脚图、PCB焊盘图，典型应用图，Datasheet数据手册等资料查询和免费下载。 参数：类型：1个N沟道；漏源电压 (Vdss)：60V；连续漏极电流 (Id)：50A；导通电阻 (RDS (on))：22mΩ@10V,25A；耗散功率 (Pd)：120W；阈值电压 (Vgs (th))：4V；栅极电荷量 (Qg)：41nC；输入电容 …

50N06 Transistor Datasheet, 50N06 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

The UTC 50N06is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances. Jiangsu Donghai Semicon...

本资料有50N06、50N06 pdf、50N06中文资料、50N06引脚图、50N06管脚图、50N06简介、50N06内部结构图和50N06引脚功能。

FQP50N06是一款60V N沟道QFET®增强模式功率MOSFET，采用平面条纹和DMOS技术生产。 这项先进技术经过特别设计，可最大程度地降低导通电阻，提供出色的开关性能并在雪崩和换向模式下承受高能量脉冲。 该器件非常适合基于半桥拓扑的高效开关电源，有源功率因数校正和电子灯镇流器。 该器件非常适合低压应用，例如DC/DC转换器，便携式和电池供电产品的高效开关。 该产品是一般用途，适用于许多不同的应用程序。 立创商城FQP50N06型号页面提供型号详细 …

50N06由HL(富海微)设计生产，立创商城现货销售，正品保证，参考价格￥0.3131，封装为TO-252。商城还提供50N06专业中文资料、详细参数、引脚图、PCB焊盘图，典型应用图，Datasheet数据手册等资料查询和免费下载。

Order today, ships today. 50N06 – N-Channel 60 V 50A (Tc) 105W (Tc) Surface Mount TO-252 (DPAK) from UMW. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.