South Korean chipmaker Samsung started shipping its 3 nm gate all around (GAA) process, named 3GAA, in mid-2022. [1] [2] On 29 December 2022, Taiwanese chip manufacturer TSMC announced that volume production using its 3 nm semiconductor node …

One of the key topics at the event was 3nm Gate-All-Around (GAA) Multi-Bridge-Channel Field Effect Transistor (MBCFET™) technology and the Static Random Access Memory (SRAM) design flexibility it provides, and this article will take a closer look at the groundbreaking technology.

2022年6月30日 · Multi-Bridge-Channel FET (MBCFET ™), Samsung’s GAA technology implemented for the first time ever, defies the performance limitations of FinFET, improving power efficiency by reducing the supply voltage level, while also enhancing performance by increasing drive current capability.

2025年4月1日 · TechInsights, the first company to reverse engineer to 3nm, has identified Samsung's revolutionary 3nm gate-all-around (GAA) process within the Whatsminer M56S++ crypto-mining ASIC from Chinese manufacturer MicroBT.

2025年3月27日 · TSMC itself expects its first GAA-based process technology — N2 — to increase performance by 10% to 15% compared to N3E, the company's second generation 3nm-class process technology that ...

2025年4月1日 · Initial SEM results confirm Samsung’s 2nd generation 3nm GAA technology in the Exynos W1000 processor. Discover key insights and implications for high-volume manufacturing requirements in our latest analysis on the TechInsights Platform.

2020年8月26日 · Samsung has announced its intention to deliver its version, known as MBC-FETs, as part of its 3nm process node, expected to be in volume manufacturing by late 2021. In May 2019, the company...

3nm Gate-All-Around (GAA) technology is introduced to suggest the future of logic transistor with performance, power, and area (PPA) benefit. However, as with the recent advanced technologies, GAA technology also faces the potential challenges to overcome for the optimum PPA.

2022年6月30日 · Samsung’s 3nm process is the industry’s first commercial production process node using gate-all-around transistor (GAAFET) technology, marking a major milestone for the field of silicon...

2019年5月15日 · Samsung is planning to introduce nano-sheet based GAAFETs on its 3nm design, replacing FinFETs entirely. When a semiconductor company designs a new chip on a given process, one of the tools...