This device is designed for general−purpose high−voltage amplifiers and gas discharge display drivers. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

2N5551 (RANGE:100-150)由CJ (江苏长电/长晶)设计生产，立创商城现货销售，正品保证，参考价格￥0.1223，封装为TO-92-3。 商城还提供2N5551 (RANGE:100-150)专业中文资料、详细参数、引脚图、PCB焊盘图，典型应用图，Datasheet数据手册等资料查询和免费下载。 参数：晶体管类型：NPN；集电极电流 (Ic)：600mA；集射极击穿电压 (Vceo)：160V；耗散功率 (Pd)：625mW；直流电流增益 (hFE)：100@10mA,5V；特征频率 (fT)：300MHz；集电极截 …

2n5551由ruilon(瑞隆源)设计生产，立创商城现货销售，正品保证，参考价格￥0.1065，封装为sot-23。 商城还提供2N5551专业中文资料、详细参数、引脚图、PCB焊盘图，典型应用图，Datasheet数据手册等资料查询和免费下载。

Part #: 2N5551. Download. File Size: 188Kbytes. Page: 6 Pages. Description: mplifier Transistors(NPN Silicon). Manufacturer: ON Semiconductor.

NPN high-voltage transistors 2N5550; 2N5551 FEATURES •Low current (max. 300 mA) •High voltage (max. 160 V). APPLICATIONS •Switching and amplification in high voltage applications such as telephony. DESCRIPTION NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complements: 2N5400 and 2N5401. PINNING PIN DESCRIPTION 1 ...

The High Voltage NPN Bipolar Transistor is designed for general purpose switching applications. The device is housed in the TO-92 package, which is designed for medium power applications. If you wish to buy products or product samples, please log in …

2025年1月10日 · 2N5551是一款常见的NPN型双极结型晶体管（BJT），广泛应用于各种电子设备中，用于信号放大和开关作用。 集电极-发射极击穿电压 (Vceo): 最大值为160V。 集电极电流 …

2N5551由onsemi(安森美)设计生产，立创商城现货销售，正品保证，参考价格￥0.9564，封装为TO-92(TO-226)。 商城还提供2N5551专业中文资料、详细参数、引脚图、PCB焊盘图，典型应用图，Datasheet数据手册等资料查询和免费下载。

Order today, ships today. 2N5551 – Bipolar (BJT) Transistor NPN 160 V 600 mA 300MHz 625 mW Through Hole TO-92 (TO-226) from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

电子发烧友网为你提供ST (先科)的2N5551相关产品参数、数据手册，更有2N5551的引脚图、接线图、封装手册、中文资料、英文资料，2N5551真值表，2N5551管脚等资料，希望可以帮助到广大的电子工程师们。