Description: PNP high-voltage transistor. Manufacturer: NXP Semiconductors.

PNP high-voltage transistor 2N5401 FEATURES •Low current (max. 300 mA) •High voltage (max. 150 V). APPLICATIONS •General purpose switching and amplification •Telephony applications. DESCRIPTION PNP high-voltage transistor in a TO-92; SOT54 plastic package. NPN complement: 2N5551. PINNING PIN DESCRIPTION 1 collector 2 base 3 emitter

This PNP Bipolar Transistor is designed for use in industrial and consumer applications. The device is housed in the TO-92 package, which is designed for medium power applications. Product services, tools and other useful resources related to 2N5401. If you wish to buy products or product samples, please log in to your onsemi account. I C Cont. (A)

Order today, ships today. 2N5401 – Bipolar (BJT) Transistor PNP 150 V 600 mA 300MHz 625 mW Through Hole TO-92 (TO-226) from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

2n5401 http://onsemi.com 5 package dimensions to−92 (to−226) case 29−11 issue am notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section x−x v c ...

Part #: 2N5401. Download. File Size: 177Kbytes. Page: 6 Pages. Description: Amplifier Transistor (PNP Silicon). Manufacturer: Motorola, Inc.

2018年11月26日 · 2N5401 is a PNP transistor designed specifically for high voltage - low power switching applications and amplifications. The NPN complementary for the device is 2N5551 and is available in TO-92, SOT54.

2N5401 is a small signal PNP bipolar junction transistor that is commonly used for amplification, switching, and voltage regulation in electronic circuits. It has a maximum collector current rating of 600 mA and a maximum collector-emitter voltage rating of 150 V.

The 2N5401 and SOC5401 are bipolar transistors able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5202/014 specification and available in LCC-3 and UB hermetic packages, they are specifically recommended for space and harsh

2N5401 / MMBT5401 PNP General Purpose Amplifier. This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. 2N5401MMBT5401. Absolute Maximum Ratings* TA = 25°C unless otherwise noted.