
This Power MOSFET series realized with STMicroelectronics unique STripFETTM process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters. For further information contact your local STMicroelectronics sales office. Table 1.
IRF630 www.vishay.com Vishay Siliconix S21-0819-Rev. C, 02-Aug-2021 4 Document Number: 91031 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
IRF630 Datasheet(PDF) - STMicroelectronics
Part #: IRF630. Download. File Size: 104Kbytes. Page: 9 Pages. Description: N - CHANNEL 200V - 0.35ihm - 9A - TO-220/FP MESH OVERLAY] MOSFET. Manufacturer: STMicroelectronics.
IRF630 MOSFETs | Vishay
IRF630. Power MOSFET. General Information: General Information. Useful Web Links. Markings: Part Marking Information. TO-220, I2PAK (TO-262), D2PAK (TO-263) (High Voltage) Packaging Information: Package Information. TO-220AB (High Voltage) Reliability Data: …
IRF630 STMicroelectronics | Discrete Semiconductor Products
IRF630 – N-Channel 200 V 9A (Tc) 75W (Tc) Through Hole TO-220 from STMicroelectronics. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
IRF630_ST(意法半导体)_IRF630中文资料_PDF手册_价格-立创商城
IRF630由ST (意法半导体)设计生产,立创商城现货销售,正品保证,参考价格¥3.56,封装为TO-220。 商城还提供IRF630专业中文资料、详细参数、引脚图、PCB焊盘图,典型应用图,Datasheet数据手册等资料查询和免费下载。 参数:类型:1个N沟道;漏源电压 (Vdss):200V;连续漏极电流 (Id):9A;导通电阻 (RDS (on)):400mΩ@10V,4.5A;耗散功 …
IRF630 - N-channel 200 V, 0.35 Ohm typ., 9 A Power MOSFET in …
Discover our medium-voltage N-channel power MOSFET portfolio, ranging from > 30 V to 350 V, for a broad range of industrial and automotive applications. Speed up your design by …
IRF630 STMicroelectronics | Mouser
5 天之前 · IRF630 STMicroelectronics MOSFETs N-Ch 200 Volt 10 Amp datasheet, inventory, & pricing.
IRF630 MOSFET Pinout, Datasheet, Specs & Equivalents
2021年8月18日 · IRF630 is a third-generation power MOSFET specially designed for applications which required high-speed switching. This component is a great combination of low on-state resistance, cost-effective, and rugged design. IRF630 is designed to sustain load voltage up to 200 V and 9 A current.
IRF630 Datasheet (PDF) - NXP Semiconductors
N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. Inchange Semiconductor ... List of Unclassifed Man...
- 一些您可能无法访问的结果已被隐去。显示无法访问的结果