07, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new automotive-grade AEC-Q101 qualified 4th Generation 1200V IGBTs that combine class-leading[1] low loss characteristics with high ...
12, 2024 /PRNewswire/ -- ROHM Co., Ltd. has developed fourth-generation 1200V IGBTs that are automotive-grade and qualified for AEC-Q101, combining class-leading* low-loss characteristics with high ...
For customers who tend to use their vehicles for short journeys in urban settings, cars fitted with IGBTs will appeal. It’s quite feasible that even the more expensive vehicles will not solely use SiC ...
12, 2024 /PRNewswire/ -- ROHM Co., Ltd. has developed fourth-generation 1200V IGBTs that are automotive-grade and qualified for AEC-Q101, combining class-leading* low-loss characteristics with ...
Abstract: The condition assessment method of the Insulated Gate Bipolar Transistor (IGBT) devices is investigated in this paper. Simulation models in 2D and 3D are constructed based on the finite ...
The isolated gate drivers target industrial and energy applications, as well as power control in charging stations, energy storage systems, and power supply units. The STGAP3S family of gate drivers ...
For the gate drivers of high-power IGBTs, mosfets, SiC mosfets and GaN hemts, Infineon has introduced an isolated power supply IC that can generate ...