A world-first N-polar GaN wafer created by Chinese scientists is set to be a game changer for the semiconductor industry.

Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based ...

STMicroelectronics and Innoscience have joined forces to enhance GaN technology for AI data centers, EVs, and renewable ...

Joint Development Agreement (JDA) on GaN technology to build the future in power electronics for AI datacenters, renewable energy generation and storage, cars and more Innoscience can make use of ...

STMicroelectronics and Innoscience have signed a joint development agreement (JDA) to develop and manufacture gallium nitride ...

STMicroelectronics (STM) and Innoscience announce the signature of an agreement on GaN technology development and manufacturing, leveraging the ...

SINGAPORE] United Microelectronics Corporation (UMC) on Tuesday (Apr 1) launched its newest wafer fabrication facility to ...